Infineon has unveiled the world’s thinnest silicon power wafers, with a thickness of 20 micrometers and a diameter of 300 millimeters.

The company said the newly produced wafers are half as thick as current state-of-the-art wafers, which measure between 40-60 micrometers. One millimeter is the equivalent of 1,000 micrometers.

The announcement comes less than two months after the German chipmaker announced it had successfully developed the world’s first 300mm power gallium nitride (GaN) wafers.

In a statement, Infineon said the silicon power wafers will help increase energy efficiency, power density, and reliability in power conversion solutions for AI data center applications. By halving the thickness of the wafer, the company claims it has reduced its substrate resistance by 50 percent, compared to conventional silicon wafers, and reduced its power loss by more than 15 percent in power systems.

According to Infineon, its engineers achieved the feat by establishing “an innovative and unique wafer grinding approach” while also addressing technical and production-related challenges, such as wafer bow and wafer separation, in order to ensure the stability of the wafers.

“The world’s thinnest silicon wafer is proof of our dedication to deliver outstanding customer value by pushing the technical boundaries of power semiconductor technology,” said Jochen Hanebeck, CEO at Infineon Technologies.

“Infineon’s breakthrough in ultra-thin wafer technology marks a significant step forward in energy-efficient power solutions and helps us leverage the full potential of the global trends decarbonization and digitalization. With this technological masterpiece, we are solidifying our position as the industry’s innovation leader by mastering all three relevant semiconductor materials: silicon, silicon carbide, and gallium nitride.”

The company will present the new silicon power wafers to the public at the Electronica trade show, taking place in Munich next month.