Ferroelectric Memory GmbH has raised $20 million in a Series B round.
M Ventures and imec.xpand led the investment, with participation from SK hynix, Robert Bosch Venture Capital, and TEL Venture Capital. The lead investor of Series A eCapital also participated in the round.
FMC develops ferroelectric hafnium oxide memory technology for non-volatile memory for future computing technologies.
Speeding up commercialization
The company's tech can transform amorphous hafnium oxide (HfO2) into crystalline ferroelectric HfO2, so that CMOS transistors and capacitors can be turned into non-volatile memory cells, a ferroelectric field-effect transistor (FeFET), or capacitor (FeCAP).
“The rise of AI, IoT, Big Data, and 5G are demanding next-generation memory solutions that enable superior speed and ultra-low power consumption, while being compatible with leading-edge CMOS logic processes guaranteeing reduced manufacturing costs,” said Ali Pourkeramati, CEO of FMC.
“We have strong interest from customers and development partners for our advantages in fast access, program and erase speed, best-in-class ultra-low energy budget, ease-of-integration into existing manufacturing processes, and low manufacturing costs. This funding will speed up the commercialization of our ferroelectric field-effect transistor (FeFET) and capacitor (FeCAP) technology into exponentially increasing markets in the AI, IoT, embedded memory, and high-performance stand-alone data center sectors.”
The company said that it is working "closely" with major semiconductor companies, as well as with foundries in the US, Europe, and Asia for its embedded non-volatile memory solutions.